Photolithography uses light to transfer circuit patterns onto semiconductor wafers, enabling the creation of integrated circuits with extreme precision. These systems typically operate in the deep ultraviolet (DUV) range at 193 nm or 248 nm, and in advanced nodes. Critical optical components include projection lenses, beam splitters, and high-reflectivity mirrors with coatings optimized for UV wavelengths and minimal distortion.
Semicon
Photonics technologies are fundamental to semiconductor manufacturing, enabling processes that achieve nanometer-scale precision and high throughput.
From wafer inspection to lithography and laser-based material processing, optical systems ensure accuracy, speed, and reliability in environments where even microscopic defects can impact device performance.
Altechna supplies high‑performance optical components and assemblies that deliver exceptional stability, durability, and beam integrity, supporting reliable operation in the demanding conditions of semiconductor fabrication.
Optics & Optomechanics
Engineered for semiconductor industry systems
Photolithography Systems
Wafer Inspection and Metrology
Inspection and metrology systems ensure defect-free wafers and accurate layer alignment, using optical techniques for non-contact measurement. Common wavelengths include visible and near-infrared ranges (400–1064 nm) for imaging and interferometry. Essential optics include precision lenses, beam splitters, and filters that deliver high resolution, low scattering, and stable alignment for nanometer-scale measurements.
Laser Dicing and Micromachining
Laser dicing and micromachining are used for precise cutting and structuring of brittle materials such as semiconductors, ceramics, and glass, offering superior accuracy and reduced mechanical stress compared to conventional sawing or milling. These systems typically operate at UV wavelengths (e.g., 355 nm) or near-infrared (1.03–1.07 µm), with ultrashort pulses (femtosecond and picosecond) enabling cold ablation and minimal heat-affected zones. Critical optical components include high-precision focusing lenses, beam shaping optics, and scanning mirrors designed for exceptional accuracy and durability under high repetition rates.
criteria
Critical performance criteria
Spectral precision
Optics must deliver precise wavelength control to ensure accurate pattern transfer and defect detection, especially in deep-UV ranges. This minimizes overlay errors and guarantees consistent critical dimensions in semiconductor manufacturing.
High power performance
Optical components must remain dimensionally stable under varying thermal loads and mechanical vibrations in high-throughput environments. Even minimal shifts can compromise alignment and yield, making stability a top priority.
Beam quality
Lenses and mirrors must maintain diffraction-limited performance to achieve nanometer-scale imaging and patterning. Superior beam quality is essential for sharp feature edges and accurate inspection results.
Resistance to DUV induced degradation
Proven long-term stability under continuous DUV exposure, with minimal spectral performance loss, minimal self-focusing, or coating failure.
Solutions
Our solution tailored for semiconductor industry application
Reflective optics for 248-266 nm range
Spectral performance
R>99% (Rs>99.4%, Rp>98.5%) AOI 45 deg.
Wavefront distortion
<L/10 @ 633 nm
Surface quality (S-D)
20-10
LIDT
0.26 J/cm² @258, 12 ps, 50 kHz, 100k-on-1
Application feedback
Survived >500k shots with 8 J/cm², 5 ns
Survived >300 h with 1 W averge power at sub-ps pulse duration and high-rep rates.
Transmissive optics for 248-266 nm range
Spectral performance
R<0.1%, T>99.5%
Wavefront distortion
<L/10 @ 633 nm
Surface quality (S-D)
20-10
LIDT
>0.56 J/cm² @258 nm, 12 ps, 50 kHz, 10k-on-1 (undamaged under max testing fluence)
4.2 J/cm² @266 nm, 5 ns, 100 Hz, 1000-on-1
Beam delivery for DUV (193 nm) range
Spectral performance
R<0.25%, T>99% for transmissive optics
Rs>98.8%, Rp>96%, R>98% for reflective optics
Wavefront distortion
<L/10 @ 633 nm
Surface quality (S-D)
20-10
Variable Beam Expander for high-power UV (343-355 nm) application
Wavefront distortion
<L/10 @633 nm
Expansion ratio
1-4X
Pointing stability
<1 mrad
Overall transmission
>97%
More than 3 months 24/7 use
in 343 nm, 1 MHz, 500 fs laser system
Beam delivery for UV (343-355 nm) range
Spectral performance
Mirrors R>99.8% (Rs>99.9%, Rp>99.7%) AOI 45 deg.
Polarizers Rs>99.7%, Tp>97% AOI Brewster
Lenses/windows R<0.1% AOI 0 deg.
Wavefront distortion
<L/10 @633 nm
Surface quality (S-D)
10-5
LIDT (Mirrors)
7.7 J/cm² @355 nm, 10 ns, 100 Hz, 1000-on-1
0.383 J/cm² @343 nm, 1 ps, 200 kHz, 10M-on-1
LIDT (windows/lenses)
7.7 J/cm² @355 nm, 10 ns, 100 Hz, 1000-on-1
0.473 J/cm² @343, 1 ps, 500 kHz, 10M-on-1
